PhD Student


Starting: October-December 2020

InGaAs infrared detectors enable InfraRed wavelengths detection in the SWIR range (up to 1.7 μm) without the need for cooling. These detectors cover several fields of applications such as Earth observation, planetology and optical telecommunications. InGaAs detectors are thus a key technology for next generation space missions. However, the sensitivity to this technology to the space radiation environment is not well studied, and it depends on many factor such as its conditions of use and especially the bias voltages. For instance, on SPOT 5, the detection circuit was coupled to a CCD reading register and was under high bias voltages, which had generated a high rate of defective pixels, but today InGaAs circuits are coupled to CMOS readout circuits, with much lower bias voltages, suggesting that the behavior under irradiation will be better.

The purpose of the PhD thesis is to study the degradation mechanisms of InGaAs infrared detection circuits when exposed to the space radiation environment. In particular, the thesis will focus on the two following radiation effects:

  • Mechanisms of displacement damage due to proton irradiation
  • Cumulative ionizing dose effects

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